JPH0467348B2 - - Google Patents

Info

Publication number
JPH0467348B2
JPH0467348B2 JP57053638A JP5363882A JPH0467348B2 JP H0467348 B2 JPH0467348 B2 JP H0467348B2 JP 57053638 A JP57053638 A JP 57053638A JP 5363882 A JP5363882 A JP 5363882A JP H0467348 B2 JPH0467348 B2 JP H0467348B2
Authority
JP
Japan
Prior art keywords
electrode
solar cell
amorphous silicon
metal
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57053638A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57176778A (en
Inventor
Aran Suootsu Jooji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS57176778A publication Critical patent/JPS57176778A/ja
Publication of JPH0467348B2 publication Critical patent/JPH0467348B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP57053638A 1981-03-31 1982-03-30 Solar battery array Granted JPS57176778A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24972981A 1981-03-31 1981-03-31

Publications (2)

Publication Number Publication Date
JPS57176778A JPS57176778A (en) 1982-10-30
JPH0467348B2 true JPH0467348B2 (en]) 1992-10-28

Family

ID=22944738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57053638A Granted JPS57176778A (en) 1981-03-31 1982-03-30 Solar battery array

Country Status (4)

Country Link
JP (1) JPS57176778A (en])
DE (1) DE3210742A1 (en])
FR (1) FR2503457B1 (en])
GB (1) GB2095908B (en])

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607778A (ja) * 1983-06-27 1985-01-16 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
US4529829A (en) * 1982-11-24 1985-07-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JPS5994885A (ja) * 1982-11-24 1984-05-31 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS5996778A (ja) * 1982-11-24 1984-06-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS59201471A (ja) * 1983-04-29 1984-11-15 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
JPS5996779A (ja) * 1982-11-24 1984-06-04 Semiconductor Energy Lab Co Ltd 光電変換装置
DE3382695T2 (de) * 1982-11-24 1993-09-23 Semiconductor Energy Lab Fotovoltaischer wandler.
JPS59107579A (ja) * 1982-12-11 1984-06-21 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS59108374A (ja) * 1982-12-14 1984-06-22 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS59172274A (ja) * 1983-03-18 1984-09-28 Sanyo Electric Co Ltd 光起電力装置の製造方法
JPH0758797B2 (ja) * 1983-04-18 1995-06-21 株式会社半導体エネルギー研究所 光電変換半導体装置の作製方法
JPS59193075A (ja) * 1983-04-18 1984-11-01 Semiconductor Energy Lab Co Ltd 光電変換半導体装置作製方法
JPH0614556B2 (ja) * 1983-04-29 1994-02-23 株式会社半導体エネルギー研究所 光電変換装置及びその作製方法
US4724011A (en) * 1983-05-16 1988-02-09 Atlantic Richfield Company Solar cell interconnection by discrete conductive regions
US4517403A (en) * 1983-05-16 1985-05-14 Atlantic Richfield Company Series connected solar cells and method of formation
JPS6014441A (ja) * 1983-07-04 1985-01-25 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6018973A (ja) * 1983-07-13 1985-01-31 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
JPH0638512B2 (ja) * 1983-10-31 1994-05-18 株式会社半導体エネルギー研究所 光電変換半導体装置
JPS6020586A (ja) * 1983-07-13 1985-02-01 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS6059786A (ja) * 1983-09-12 1985-04-06 Sanyo Electric Co Ltd 瓦状光起電力装置の製造方法
JPS6041266A (ja) * 1983-08-15 1985-03-04 Semiconductor Energy Lab Co Ltd 半導体装置作製方法およびその作製用装置
JPS6085574A (ja) * 1983-10-18 1985-05-15 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPH0712031B2 (ja) * 1983-10-27 1995-02-08 株式会社半導体エネルギー研究所 透光性導電膜の加工方法
JPS6094781A (ja) * 1983-10-27 1985-05-27 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH0712032B2 (ja) * 1983-11-07 1995-02-08 株式会社半導体エネルギー研究所 有機樹脂上被膜のレーザ加工方法
JPH0713954B2 (ja) * 1983-11-07 1995-02-15 株式会社 半導体エネルギー研究所 液晶表示装置作製方法
JPS60103623A (ja) * 1983-11-10 1985-06-07 Semiconductor Energy Lab Co Ltd レ−ザ加工方法
JP2540501B2 (ja) * 1983-11-10 1996-10-02 株式会社 半導体エネルギー研究所 レ−ザ加工方法
JPS60110178A (ja) * 1983-11-18 1985-06-15 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS60206077A (ja) * 1984-03-29 1985-10-17 Taiyo Yuden Co Ltd 非晶質半導体太陽電池の製造方法
JPS6191971A (ja) * 1984-10-12 1986-05-10 Fuji Electric Co Ltd 太陽電池装置の製造方法
US4697041A (en) * 1985-02-15 1987-09-29 Teijin Limited Integrated solar cells
JPS61241981A (ja) * 1985-04-19 1986-10-28 Teijin Ltd 薄膜太陽電池の製造方法
DE3545385A1 (de) * 1985-12-20 1987-06-25 Messerschmitt Boelkow Blohm Verfahren zur herstellung einer solarzellenanordnung
DE3604917A1 (de) * 1986-02-17 1987-08-27 Messerschmitt Boelkow Blohm Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen
JPS61210681A (ja) * 1986-02-20 1986-09-18 Sanyo Electric Co Ltd 集積型光起電力装置の製造方法
DE3714920C1 (de) * 1987-05-05 1988-07-14 Messerschmitt Boelkow Blohm Verfahren zur Herstellung einer Duennschicht-Solarzellenanordnung
JPS62295467A (ja) * 1987-05-29 1987-12-22 Semiconductor Energy Lab Co Ltd 光電変換装置
JPH088369B2 (ja) * 1993-01-26 1996-01-29 株式会社半導体エネルギー研究所 光電変換半導体装置
US5288456A (en) * 1993-02-23 1994-02-22 International Business Machines Corporation Compound with room temperature electrical resistivity comparable to that of elemental copper
JPH06314808A (ja) * 1993-06-21 1994-11-08 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
JP2012532457A (ja) * 2009-06-30 2012-12-13 エルジー イノテック カンパニー リミテッド 太陽光発電装置及びその製造方法
USD621682S1 (en) 2009-08-21 2010-08-17 Schlage Lock Company Llc Door lever
USD621681S1 (en) 2009-08-21 2010-08-17 Schlage Lock Company Llc Door lever
KR101072106B1 (ko) * 2009-10-01 2011-10-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4142195A (en) * 1976-03-22 1979-02-27 Rca Corporation Schottky barrier semiconductor device and method of making same
US4042418A (en) * 1976-08-02 1977-08-16 Westinghouse Electric Corporation Photovoltaic device and method of making same
JPS5363983A (en) * 1976-11-19 1978-06-07 Toshiba Corp Semiconductor device
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
US4191794A (en) * 1978-05-11 1980-03-04 Westinghouse Electric Corp. Integrated solar cell array

Also Published As

Publication number Publication date
JPS57176778A (en) 1982-10-30
DE3210742C2 (en]) 1991-05-08
FR2503457A1 (fr) 1982-10-08
GB2095908B (en) 1985-10-02
GB2095908A (en) 1982-10-06
FR2503457B1 (fr) 1987-01-23
DE3210742A1 (de) 1982-10-21

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